Pulsed Laser Co-Deposition System
Triple Pulsed Laser co-deposition system (3B-PLD)
Parameter index Features Product Application - Film Preparation Application Scenario Feedback Download

Enable domestic small solid-state pulsed lasers Modular overall displacement of optical path system Realize multi-beam co-deposition Self-developed large-area heaters Develop control software to realize intelligent operation

Feature Details
Substrate double-side     2'' diameter standard    3'' and 4'' on request
PLD Chamber size 18'' diameter Spherical chamber standard  (Adjustable on request)
Base vaccum 5.0×10-8 Torr standard (at room temperature)
  Standard armored heater ≤900°C
Substrate Heating Advanced armored heater ≤1100°C
  SiC heater ≤1600°C
Nd:YAG Laser (Made in China) Selectable wavelength including 266, 355, 532 and 1064 nm
Maximum Scanning Range 60mm(Available to prepare 4'' film)
Process gases O, N, Ar
Annealing Pressure ≤ 1 atm
Target Carousel

3×2'' diameter standard    >3×2'' on request

Automation Open-source Control System based on LabVIEW

 

 

Zhongpei Feng Jingting Yang

 

 

"Large Scale" Rotary Irradiation Heaters

Non-contact radiation heating, can be reversed to prepare double-sided films
The dense arrangement of furnace wires increases the heating load
Withstands pure oxygen annealing atmosphere below 1 atmosphere pressure

 

 

Scanning sputtering enables 'large-scale' thin film deposition

Extremely simplified "straight path" with minimal loss
The overall mobile scanning of laser components ensures consistency and stability
Co-sputter deposition of three laser beams to improve efficiency
Completely open source software and hardware automation control system, support scan compensation

 

SrTiO3 Standard Reference Sample

 

      

SrTiO3 (STO) Film on LaAlO3 substrate

Surface Roughness

0.366 nm (RMS)

FWHM

0.069°

Distribution

Thickness   ±0.9%

Lattice Constant   ±0.08%

Growth Speed

6.7 nm/min

 

 

 

YBa2Cu3O7-x large size film quality

 

            

YBa2Cu3O7-x  (YBCO) Film on LaAlO3 substrate

Microwave Surface Resistance

<0.24 mΩ         @77 K @10 GHz

Critical Current Density

~ 3.0 MA/cm2 @77 K

Surface Roughness

9.66 nm (RMS)

Distribution

Thickness   ±0.46%

Growth Speed

 13 nm/min

 

Recently installed

installation time

Introduction to Customized Services

 

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