Pulsed Laser Beam Deposition (PLD)
Release date: 2022-01-11 Views: 217

 

Parameter index


FEATURE

DETAILS

Substrate

double-side    2'' diameter standard     3'' and 4'' on request

PLD Chamber size

18'' diameter Spherical chamber standard (Adjustable on request)

Base vaccum

5.0×10-8  Torr standard (at room temperature)

 

Standard armored heater

≤900°C

Substrate Heating

Advanced armored heater

≤1100°C

 

SiC heater

≤1600°C

Nd:YAG Laser (Made in China)

Selectable wavelength including 266, 355, 532 and 1064 nm

Maximum Scanning Range

60mm(Available to prepare 4’’ film)

Process gases

 O2, N2, Ar

Annealing Pressure

 ≤ 1 atm

Target Carousel

3×2'' diameter standard   >3×2'' on request

Automation

Open-source Control System based on LabVIEW

 

Features


"Large Scale" Rotary Irradiation Heaters

Non-contact radiation heating, can be reversed to prepare double-sided films.
The dense arrangement of furnace wires increases the heating load.
Resistant to pure oxygen annealing atmosphere below 1 atmosphere pressure.

 

 

Scanning sputtering enables 'large-scale' thin film deposition

Extremely simplified "straight path" with minimal loss
The overall mobile scanning of laser components ensures consistency and stability
Co-sputter deposition of three laser beams to improve efficiency
Completely open source software and hardware automation control system, support scan compensation

 

 

Product Application - Film Preparation


SrTiO3 Standard Reference Sample (2 inches)

 

SrTiO3 (STO) Film on LaAlO3 substrate

          

Surface Roughness

0.366 nm (RMS)

FWHM

0.069°

Distribution

Thickness   ±0.9%

Lattice Constant   ±0.08%

Growth Speed

6.7 nm/min

 

 

 

YBa2Cu3O7-x large size film quality (2 inches)

 

            

YBa2Cu3O7-x  (YBCO) Film on LaAlO3 substrate

Microwave Surface Resistance

<0.24 mΩ         @77 K @10 GHz

Critical Current Density

~ 3.0 MA/cm2 @77 K

Surface Roughness

9.66 nm (RMS)

Distribution

Thickness   ±0.46%

Growth Speed

 13 nm/min

 

 

Zhongpei Feng Jingting Yang
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